Inqubo yokwenziwa ngokomzimba kwe-zinc selenide ifaka phakathi izindlela zobuchwepheshe ezilandelayo kanye nemingcele enemininingwane

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Inqubo yokwenziwa ngokomzimba kwe-zinc selenide ifaka phakathi izindlela zobuchwepheshe ezilandelayo kanye nemingcele enemininingwane

1. Ukwenziwa kwe-Solvothermal

1. Okuluhlazaisilinganiso sezinto ezibonakalayo
Impuphu ye-zinc kanye nempuphu ye-selenium zixutshwa ngesilinganiso se-molar esingu-1:1, bese kuthi amanzi acwebezelwe noma i-ethylene glycol yengezwe njenge-solvent medium 35.

2.Izimo zokusabela

o Izinga lokushisa lokusabela: 180-220°C

o Isikhathi sokusabela: amahora angu-12-24

o Ukucindezela: Gcina ukucindezela okuzenzekelayo eketheni lokusabela elivaliwe
Inhlanganisela eqondile ye-zinc ne-selenium iqhutshwa ukufudumeza ukuze kukhiqizwe amakristalu e-zinc selenide angama-nanoscale 35.

3.Inqubo yangemva kokwelashwa
Ngemva kokusabela, yafakwa i-centrifuge, yagezwa nge-ammonia encibilikisiwe (80 °C), i-methanol, yabe isiyomiswa nge-vacuum (120 °C, P₂O₅).i-btaini-powder > 99.9% ubumsulwa 13.


2. Indlela yokufaka umusi wamakhemikhali

1.Ukwelashwa kwangaphambili kwezinto ezingavuthiwe

o Ubumsulwa bezinto zokusetshenziswa ze-zinc bungu-≥ 99.99% futhi bubekwe endaweni yokubethela i-graphite

o Igesi ye-hydrogen selenide ithuthwa yi-argon gas carry6.

2.Ukulawula izinga lokushisa

o Indawo yokuhwamuka kwe-zinc: 850-900°C

o Indawo yokubeka: 450-500°C
Ukufakwa kwe-zinc vapor kanye ne-hydrogen selenide ngendlela eqondiswayo ngokwe-gradient yokushisa 6.

3.Amapharamitha egesi

o Ukugeleza kwe-Argon: 5-10 L/min

o Ukucindezela okuyingxenye kwe-hydrogen selenide:0.1-0.3 atm
Amazinga okufakwa angafinyelela ku-0.5-1.2 mm/h, okuholela ekwakhekeni kwe-polycrystalline zinc selenide engu-60-100 mm ubukhulu..


3. Indlela yokuhlanganisa ngqo yesigaba esiqinile

1. Okuluhlazaukuphathwa kwezinto
Isixazululo se-zinc chloride sahlanganiswa nesisombululo se-oxalic acid ukuze sakhe i-zinc oxalate precipitate, eyomisiwe futhi yagaywa yaxutshwa ne-selenium powder ngesilinganiso esingu-1:1.05 molar 4..

2.Amapharamitha okusabela kokushisa

o Izinga lokushisa lesithando se-vacuum tube: 600-650°C

o Gcina isikhathi sifudumele: amahora angu-4-6
Impuphu ye-zinc selenide enosayizi wezinhlayiya ezingu-2-10 μm ikhiqizwa ukusabela kokusabalala kwesigaba esiqinile 4.


Ukuqhathaniswa kwezinqubo ezibalulekile

indlela

I-topography yomkhiqizo

Usayizi wezinhlayiya/ukujiya

Ubukristali

Izinkambu zesicelo

Indlela ye-Solvothermal 35

Ama-nanoball/izinduku

20-100 nm

I-sphalerite yama-cubic

Amadivayisi e-Optoelectronic

Ukufakwa komusi 6

Amabhulokhi e-Polycrystalline

60-100 mm

Isakhiwo esinama-hexagonal

I-infrared optics

Indlela yesigaba esiqinile 4

Izimpushana ezinobukhulu be-micron

2-10 μm

Isigaba se-cubic

Izinto ezisetshenziswayo ze-infrared

Amaphuzu abalulekile okulawula inqubo ekhethekile: indlela ye-solvothermal idinga ukwengeza ama-surfactant afana ne-oleic acid ukulawula isimo se-5, kanti ukufakwa komhwamuko kudinga ukuthi ubulukhuni be-substrate bube < Ra20 ukuqinisekisa ukufana kokufakwa 6.

 

 

 

 

 

1. Ukufakwa komhwamuko ngokomzimba (I-PVD).

1.Indlela Yobuchwepheshe

o Izinto eziluhlaza ze-Zinc selenide ziyaphefumula endaweni evalekile bese zifakwa phezu kwendawo engaphansi komhlaba kusetshenziswa ubuchwepheshe bokupompa noma bokuhwamuka kokushisa12.

o Imithombo yokuhwamuka kwe-zinc ne-selenium ishiswa ngezinga lokushisa elihlukene (indawo yokuhwamuka kwe-zinc: 800–850 °C, indawo yokuhwamuka kwe-selenium: 450–500 °C), kanti isilinganiso se-stoichiometric silawulwa ngokulawula izinga lokuhwamuka.12.

2.Ukulawula ipharamitha

o I-vacuum: ≤1×10⁻³ Pa

o Izinga lokushisa eliphansi: 200–400°C

o Izinga lokufaka imali:0.2–1.0 nm/s
Amafilimu e-zinc selenide anobukhulu obungu-50–500 nm angalungiselelwa ukusetshenziswa kuma-infrared optics 25.


2Indlela yokugaya ibhola ngomshini

1.Ukuphathwa kwezinto ezingavuthiwe

o Impuphu ye-zinc (ubumsulwa≥99.9%) ixutshwa nempuphu ye-selenium ngesilinganiso se-molar esingu-1:1 bese ifakwa ebhodweni lokugaya ibhola lensimbi engagqwali 23.

2.Amapharamitha enqubo

o Isikhathi sokugaya ibhola: amahora ayi-10–20

Isivinini: 300–500 rpm

o Isilinganiso se-Pellet: 10:1 (amabhola okugaya e-zirconia).
Ama-nanoparticle e-Zinc selenide anosayizi wezinhlayiya ongu-50–200 nm akhiqizwa ukusabela kokuhlanganiswa kwemishini, ngobumsulwa obungu->99% 23.


3. Indlela yokucindezela ngokucindezela okushisayo

1.Ukulungiselela i-precursor

o I-Zinc selenide nanopowder (usayizi wezinhlayiya < 100 nm) eyenziwe ngendlela ye-solvothermal njengezinto zokusetshenziswa 4.

2.Amapharamitha okuhlanza

o Izinga Lokushisa: 800–1000°C

o Ukucindezela: 30–50 MPa

o Gcina kufudumele: amahora angu-2–4
Umkhiqizo unobuningi obungu-> 98% futhi ungacutshungulwa ube izingxenye ezinkulu ze-optical ezifana namafasitela e-infrared noma amalensi 45.


4. I-epitaxy ye-molecular beam (I-MBE).

1.Indawo yokuhlanza ephezulu kakhulu

o I-vacuum: ≤1×10⁻⁷ Pa

o Imishayo yama-molecule ye-zinc ne-selenium ilawula ngokunembile ukugeleza komthombo wokuhwamuka komsebe we-electron6.

2.Imingcele yokukhula

o Izinga lokushisa eliyisisekelo: 300–500°C (ama-GaA noma ama-sapphire substrates avame ukusetshenziswa).

o Izinga lokukhula:0.1–0.5 nm/s
Amafilimu amancane e-single-crystal zinc selenide angalungiswa ebangeni lokujiya elingu-0.1–5 μm kumadivayisi e-optoelectronic anembile kakhulu56.

 


Isikhathi sokuthunyelwe: Ephreli-23-2025