1. I-solvothermal synthesis
1. Okuluhlazaisilinganiso sezinto ezibonakalayo.
Impushana ye-zinc kanye ne-selenium powder kuxutshwe ngesilinganiso esingu-1: 1 se-molar, futhi amanzi angcolile noma i-ethylene glycol yengezwa njenge-solvent medium 35..
2 .Izimo zokusabela
o Izinga lokushisa lokusabela: 180-220°C
o Isikhathi sokuphendula: amahora ayi-12-24
o Ingcindezi: Gcina ukucindezela okuzikhiqizela wena kuketela lokusabela elivaliwe
Inhlanganisela eqondile ye-zinc ne-selenium yenziwa lula ngokufudumeza ukuze kukhiqizwe amakristalu e-selenide e-nanoscale zinc 35.
3.Inqubo yangemva kokwelashwa.
Ngemuva kokusabela, yafakwa i-centrifuged, yagezwa nge-ammonia exutshiwe (80 °C), i-methanol, kanye ne-vacuum yomiswa (120 °C, P₂O₅).btainimpushana > 99.9% ubumsulwa 13.
2. Indlela yokubeka umhwamuko wamakhemikhali
1.Ukwelashwa kwangaphambili kwempahla eluhlaza
o Ubumsulwa bezinto ezingavuthiwe ze-zinc ≥ 99.99% futhi zibekwe ku-graphite crucible
o Igesi ye-hydrogen selenide ithuthwa nge-argon gas carry6.
2 .Ukulawula izinga lokushisa
o Indawo yokuhwamuka kweZinc: 850-900°C
o Indawo yokubeka: 450-500°C
Ukubekwa ngendlela eqondile komhwamuko we-zinc ne-hydrogen selenide nge-gradient yezinga lokushisa 6.
3 .Imingcele yegesi
o Ukugeleza kwe-Argon: 5-10 L/min
o Ingcindezi eyingxenye ye-hydrogen selenide:0.1-0.3 atm
Amazinga okubekwa angafinyelela ku-0.5-1.2 mm/h, okuholela ekwakhekeni kwe-polycrystalline zinc selenide 6 ewugqinsi ongu-60-100 mm..
3. Indlela eqondile yokuhlanganiswa kwesigaba esiqinile
1. Okuluhlazaukuphatha impahla.
Isixazululo se-zinc chloride sasabela ngesisombululo se-oxalic acid ukwenza i-zinc oxalate precipitate, eyomiswa futhi igaywe futhi ixutshwe ne-selenium powder ngesilinganiso se-1: 1.05 molar 4.
2 .Amapharamitha wokusabela okushisayo
o Izinga lokushisa lesithando somlilo: 600-650°C
o Gcina isikhathi esifudumele: amahora ama-4-6
I-Zinc selenide powder enosayizi wezinhlayiyana we-2-10 μm ikhiqizwa ukusabela kokusabalalisa kwesigaba esiqinile 4.
Ukuqhathaniswa kwezinqubo ezibalulekile
indlela | Isimo sendawo yomkhiqizo | Usayizi wezinhlayiya/ukujiya | I-Crystallinity | Izinkambu zesicelo |
Indlela ye-Solvothermal 35 | Ama-Nanoballs/izinduku | 20-100 nm | I-Cubic sphalerite | Imishini ye-Optoelectronic |
Ukufakwa kwe-vapor 6 | Amabhlogo we-Polycrystalline | 60-100 mm | Ukwakheka kwe-hexagonal | I-infrared optics |
Indlela yesigaba esiqinile 4 | Izimpushana ezinosayizi omncane | 2-10 μm | Isigaba seCubic | Izandulela ezibonakalayo ze-infrared |
Amaphuzu abalulekile okulawula inqubo ekhethekile: indlela ye-solvothermal idinga ukwengeza ama-surfactants njenge-oleic acid ukuze ilawule i-morphology 5, futhi ukufakwa komhwamuko kudinga ubulukhuni be-substrate ukuthi bube ngu-< Ra20 ukuze kuqinisekiswe ukufana kwe-deposition 6..
1. Ukufakwa komhwamuko obonakalayo (I-PVD).
1 .Indlela Yobuchwepheshe
o I-Zinc selenide impahla eluhlaza ifakwa umhwamuko endaweni yevacuum bese ifakwa endaweni engaphansi kusetshenziswa ubuchwepheshe bokuhwamuka noma ukuhwamuka okushisayo12.
o Imithombo yokuhwamuka kwe-zinc ne-selenium ishiselwa kumazinga okushisa ahlukene (indawo yokuhwamuka kwe-zinc: 800–850 °C, indawo yokuhwamuka kwe-selenium: 450–500 °C), futhi isilinganiso se-stoichiometric silawulwa ngokulawula izinga lokuhwamuka..12.
2 .Ukulawula ipharamitha
o Vacuum: ≤1×10⁻³ Pa
o Ukushisa okuyisisekelo: 200–400°C
o Izinga lokubeka:0.2–1.0 nm/s
Amafilimu e-Zinc selenide anogqinsi lwe-50-500 nm angalungiselelwa ukusetshenziswa ku-infrared optics 25.
2. Indlela yokugaya ibhola lomshini
1.Ukubamba impahla eluhlaza
o Zinc powder (purity≥99.9%) ixutshwe ne-selenium powder ngesilinganiso esingu-1:1 molar bese ilayishwa embizeni yokugaya yensimbi engenasici engu-23.
2 .Amapharamitha okucubungula
o Isikhathi sokugaya ibhola: amahora ayi-10–20
Isivinini: 300-500 rpm
o Isilinganiso se-Pellet: 10:1 (i-zirconia yokugaya amabhola).
I-Zinc selenide nanoparticles enosayizi wezinhlayiyana ezingama-50-200 nm akhiqizwa ukusabela kwe-alloying ngomshini, ngobumsulwa be> 99% 23..
3. Indlela yokucindezela okushisayo
1 .Ukulungiselela isandulela
o Zinc selenide nanopowder (usayizi wezinhlayiyana <100 nm) ohlanganiswe ngendlela ye-solvothermal njengento eluhlaza 4.
2 .Sintering nemingcele
o Izinga lokushisa: 800–1000°C
o Ingcindezi: 30–50 MPa
o Zigcine ufudumele: amahora angu-2–4
Umkhiqizo unokuminyana okungu-> 98% futhi ungacutshungulwa ube yizingxenye ze-optical zefomethi enkulu njengamafasitela e-infrared noma amalensi 45..
4. I-epitaxy ye-molecular beam (MBE).
1.Imvelo ye-vacuum ephezulu kakhulu
o Vacuum: ≤1×10⁻⁷ Pa
o Imishayo yamangqamuzana e-zinc ne-selenium ilawula ngokunembile ukugeleza komthombo we-electron beam evaporation6.
2.Imingcele yokukhula
o Izinga lokushisa eliyisisekelo: 300–500°C (ama-GaAs noma ama-sapphire substrates avame ukusetshenziswa).
o Izinga lokukhula:0.1–0.5 nm/s
Amafilimu amancane e-crystal zinc selenide amancane angalungiselelwa kububanzi obugqinsi obungu-0.1–5 μm ukuze kusetshenziswe imishini ye-optoelectronic enembile kakhulu56.
Isikhathi sokuthumela: Apr-23-2025