1. Isingeniso

I-Zinc telluride (ZnTe) iyimpahla ebalulekile ye-semiconductor yeqembu le-II-VI enesakhiwo se-bandgap eqondile. Ezingeni lokushisa legumbi, i-bandgap yayo icishe ibe ngu-2.26eV, futhi ithola ukusetshenziswa okubanzi emishinini ye-optoelectronic, amaseli elanga, izitholi zemisebe, neminye imikhakha. Lesi sihloko sizonikeza isingeniso esiningiliziwe sezinqubo ezihlukahlukene zokuhlanganiswa kwe-zinc telluride, okuhlanganisa ukusabela okuqinile-kwesimo, ukuthuthwa kwe-vapor, izindlela ezisekelwe kwisixazululo, i-molecular beam epitaxy, njll. Indlela ngayinye izochazwa kahle ngokwemigomo yayo, izinqubo, izinzuzo kanye nokubi, kanye nokucatshangelwa okuyinhloko.

2. I-Solid-State Rection Method ye-ZnTe Synthesis

2.1 Isimiso

Indlela ye-solid-state reaction iyindlela evamile yokulungiselela i-zinc telluride, lapho i-zinc ehlanzekile kakhulu ne-tellurium isabela ngokuqondile emazingeni okushisa aphezulu ukuze kwakhiwe i-ZnTe:

Zn + Te → ZnTe

2.2 Inqubo enemininingwane

2.2.1 Ukulungiselela Impahla Engahluziwe

1. Ukukhethwa Kwezinto Ezibalulekile: Sebenzisa ama-zinc ahlanzekile kakhulu nezigaxa ze-tellurium ngobumsulwa ≥99.999% njengezisetshenziswa zokuqala.
2. Ukwelashwa Kwangaphambili Kwezinto:
   • Ukwelashwa nge-zinc: Qala ngokucwilisa ku-dilute hydrochloric acid (5%) iminithi elingu-1 ukuze ukhiphe ama-oxide angaphezulu, hlambulula ngamanzi angcolile, ugeze nge-ethanol enamanzi, futhi ekugcineni wome kuhhavini wevacuum engu-60°C amahora amabili.
   • Ukwelashwa kwe-Tellurium: Qala ngokucwilisa ku-aqua regia (HNO₃:HCl=1:3) imizuzwana engu-30 ukuze ususe ama-oxide angaphezulu, ugeze ngamanzi angcolile kuze kube yilapho ungathathi hlangothi, ugeze nge-ethanol enamanzi, futhi ekugcineni wome kuhhavini wevacuum engu-80°C amahora angu-3.
3. Isisindo: Kala izinto zokusetshenziswa ngokwesilinganiso se-stoichiometric (Zn:Te=1:1). Uma kucatshangelwa ukuvuthwa kwe-zinc okungenzeka emazingeni okushisa aphezulu, ukweqisa okungama-2-3% kungase kwengezwe.

2.2.2 Ukuxuba Izinto

1. Ukugaya Nokuxuba: Faka i-zinc enesisindo ne-tellurium odakeni lwe-agate bese ugaya imizuzu engu-30 ebhokisini legilavu ​​eligcwele i-argon kuze kuxutshwe ngokufanayo.
2. I-Pelletizing: Faka impushana exutshwe esikhunjeni bese ucindezela kuma-pellets anobubanzi obuyi-10-20mm ngaphansi kwengcindezi engu-10-15MPa.

2.2.3 Ukulungiselela Umkhumbi Ophendulayo

1. I-Quartz Tube Treatment: Khetha amashubhu e-quartz ahlanzekile kakhulu (ububanzi bangaphakathi obungu-20-30mm, ukujiya kodonga 2-3mm), qala ngokucwilisa e-aqua regia amahora angu-24, hlambulula kahle ngamanzi akhishiwe, bese womisa kuhhavini ongu-120°C.
2. Ukuphuma: Beka ama-pellets we-raw material kushubhu ye-quartz, xhuma kusistimu ye-vacuum, bese uphuma uye ku-≤10⁻³Pa.
3. Ukuvala: Vala ishubhu le-quartz usebenzisa ilangabi le-hydrogen-oxygen, uqinisekise ubude bokuvala ≥50mm ukuze bungangeni moya.

2.2.4 Ukusabela Kwezinga Lokushisa Eliphezulu

1. Isiteji Sokushisa Sokuqala: Faka ithubhu ye-quartz evaliwe esithandweni somlilo bese ushisa ku-400 ° C ngesilinganiso se-2-3 ° C / min, ubambe amahora angu-12 ukuze uvumele ukusabela kokuqala phakathi kwe-zinc ne-tellurium.
2. Isigaba Sesibili Sokushisa: Qhubeka nokushisa ku-950-1050 ° C (ngezansi kwendawo yokuthambisa i-quartz engu-1100 ° C) ku-1-2 ° C/min, ubambe amahora angu-24-48.
3. I-Tube Rocking: Ngesikhathi sezinga lokushisa eliphezulu, tshekisa isithando somlilo ku-45° njalo emahoreni angu-2 futhi unyakazise izikhathi ezimbalwa ukuze uqinisekise ukuxutshwa okuphelele kwezinto ezisabelayo.
4. Ukupholisa: Ngemva kokuqeda ukusabela, pholisa kancane ukuya ekamelweni lokushisa ku-0.5-1°C/min ukuze uvimbele ukuqhekeka kwesampula ngenxa yokucindezeleka okushisayo.

2.2.5 Ukucubungula Umkhiqizo

1. Ukususwa Komkhiqizo: Vula ithubhu ye-quartz ebhokisini legilavu ​​bese ususa umkhiqizo wokusabela.
2. Ukugaya: Phinda ugaye umkhiqizo ube yimpushana ukuze ususe noma yiziphi izinto ezingaphenduliwe.
3. I-Annealing: Faka i-powder ku-600 ° C ngaphansi kwe-argon emkhathini amahora angu-8 ukuze ukhulule ukucindezeleka kwangaphakathi futhi uthuthukise i-crystallinity.
4. Isici: Yenza i-XRD, i-SEM, i-EDS, njll., ukuze uqinisekise ubumsulwa besigaba kanye nokwakheka kwamakhemikhali.

2.3 Ukuthuthukiswa Kwepharamitha Yenqubo

1. Ukulawula izinga lokushisa: Izinga lokushisa elilungile lokusabela ngu-1000±20°C. Amazinga okushisa aphansi angase abangele ukusabela okungaphelele, kuyilapho amazinga okushisa aphezulu angase abangele i-zinc volatilization.
2. Ukulawula Isikhathi: Isikhathi sokubamba kufanele sibe amahora angu-≥24 ukuqinisekisa ukusabela okuphelele.
3. Izinga Lokupholisa: Ukupholisa kancane (0.5-1°C/min) kukhiqiza izinhlamvu zekristalu ezinkulu.

2.4 Ukuhlaziya Okuhle Nemibi

Izinzuzo:

• Inqubo elula, izidingo zemishini ephansi
• Ifanele ukukhiqizwa kwenqwaba
• Ukuhlanzeka komkhiqizo okuphezulu

Ububi:

• Izinga lokushisa eliphezulu lokusabela, ukusetshenziswa kwamandla okuphezulu
• Ukusatshalaliswa kosayizi wokusanhlamvu okungajwayelekile
• Ingaqukatha amanani amancane wezinto ezingaphenduliwe

3. Indlela Yokuthuthwa Kwe-Vapor Ye-ZnTe Synthesis

3.1 Isimiso

Indlela yokuthutha umhwamuko isebenzisa igesi yenkampani ukuthutha imfucumfucu esabelayo iyise endaweni enezinga lokushisa eliphansi ukuze ibekwe, ifinyelele ukukhula okuqondile kwe-ZnTe ngokulawula izinga lokushisa. Iodine isetshenziswa kakhulu njenge-ejenti yokuthutha:

I-ZnTe(ama) + I₂(g) ⇌ ZnI₂(g) + 1/2Te₂(g)

3.2 Inqubo Eningiliziwe

3.2.1 Ukulungiselela Impahla Engahluziwe

1. Ukukhetha Okubalulekile: Sebenzisa impushana ye-ZnTe ehlanzeke kakhulu (ubumsulwa ≥99.999%) noma izimpushana ezixutshwe nge-stoichiometrically Zn kanye ne-Te.
2. Ukulungiselela Umenzeli Wezokuthutha: Amakristalu e-iodine ehlanzekile (ubumsulwa ≥99.99%), umthamo wevolumu yeshubhu yokusabela engu-5-10mg/cm³.
3. I-Quartz Tube Treatment: Kuyafana nendlela yokusabela yesimo esiqinile, kodwa amashubhu amade equartz (300-400mm) ayadingeka.

3.2.2 I-Tube Loading

1. Ukubekwa Kwempahla: Beka i-ZnTe powder noma ingxube ye-Zn+Te ekugcineni kweshubhu ye-quartz.
2. Ukwengezwa kwe-Iodine: Faka amakristalu e-iodine kushubhu ye-quartz ebhokisini lamagilavu.
3. Ukuphuma: Phuma uye ku-≤10⁻³Pa.
4. Ukuvala: Vala ngelangabi le-hydrogen-oxygen, ugcine ishubhu livundlile.

3.2.3 Ukusethwa Kwezinga Lezinga lokushisa

1. Izinga Lokushisa Lendawo: Sethela ku-850-900°C.
2. I-Cold Zone Temperature: Setha ku-750-800°C.
3. Ubude bendawo yeGradient: Cishe 100-150mm.

3.2.4 Inqubo Yokukhula

1. Isigaba sokuqala: Shisisa ufike ku-500°C ku-3°C/min, ubambe amahora ama-2 ukuvumela ukusabela kokuqala phakathi kwe-iodine nezinto ezingavuthiwe.
2. Isigaba Sesibili: Qhubeka ushisisa izinga lokushisa elibekiwe, gcina izinga lokushisa, futhi ukhule izinsuku ezingu-7-14.
3. Ukupholisa: Ngemva kokuqedwa kokukhula, kuphole ekamelweni lokushisa ku-1°C/min.

3.2.5 Ukuqoqwa Kwemikhiqizo

1. Ukuvula Ishubhu: Vula ithubhu yequartz ebhokisini legilavu.
2. Iqoqo: Qoqa amakristalu e-ZnTe eyodwa ekugcineni okubandayo.
3. Ukuhlanza: Hlanza nge-ultrasonically nge-ethanol anhydrous imizuzu engu-5 ukuze ususe iodine engaphezulu.

3.3 Amaphuzu Okulawula Inqubo

1. Ukulawula Inani le-Iodine: Ukuhlushwa kwe-iodine kuthinta izinga lokuthutha; ububanzi obulungile ngu-5-8mg/cm³.
2. I-Gradient Yezinga lokushisa: Gcina i-gradient phakathi kuka-50-100°C.
3. Isikhathi Sokukhula: Imvamisa izinsuku eziyi-7-14, kuye ngosayizi wekristalu oyifunayo.

3.4 Ukuhlaziya Okuhle Nokubi

Izinzuzo:

• Amakristalu angabodwa asezingeni eliphakeme angatholakala
• Amasayizi amakristalu amakhulu
• Ukuhlanzeka okuphezulu

Ububi:

• Imijikelezo yokukhula emide
• Izidingo zemishini ephezulu
• Isivuno esiphansi

4. Indlela Esekelwe Isixazululo ye-ZnTe Nanomaterial Synthesis

4.1 Isimiso

Izindlela ezisekelwe kusixazululo zilawula ukusabela kwesandulela esixazululweni sokulungiselela i-ZnTe nanoparticles noma ama-nanowires. Ukusabela okujwayelekile ukuthi:

Zn²⁺ + HTe⁻ + OH⁻ → ZnTe + H₂O

4.2 Inqubo Eningiliziwe

4.2.1 Ukulungiselela I-Reagent

1. Umthombo weZinc: I-Zinc acetate (Zn(CH₃COO)₂·2H₂O), ubumsulwa ≥99.99%.
2. Umthombo we-Tellurium: I-Tellurium dioxide (TeO₂), ubumsulwa ≥99.99%.
3. I-ejenti Yokunciphisa: I-sodium borohydride (NaBH₄), ubumsulwa ≥98%.
4. Izinto ezincibilikayo: Amanzi angcolile, i-ethylenediamine, i-ethanol.
5. I-Surfactant: I-Cetyltrimethylammonium bromide (CTAB).

4.2.2 Ukulungiselela I-Tellurium Precursor

1. Ukulungiselela Isixazululo: Chaza i-0.1mmol TeO₂ emanzini angama-20ml enziwe nge-deionized.
2. Ukusabela Ngokunciphisa: Engeza i-0.5mmol NaBH₄, gudluza ngozibuthe imizuzu engu-30 ukuze ukhiqize isisombululo se-HTe⁻.
   I-TeO₂ + 3BH₄⁻ + 3H₂O → HTe⁻ + 3B(OH)₃ + 3H₂↑
3. I-Protective Atmosphere: Gcina ukugeleza kwe-nitrogen kuyo yonke indawo ukuze uvimbele i-oxidation.

4.2.3 I-ZnTe Nanoparticle Synthesis

1. Ukulungiswa Kwesixazululo Se-Zinc: Chaza i-0.1mmol zinc acetate ku-30ml ethylenediamine.
2. Ukusabela Okuxubile: Faka kancane kancane isixazululo se-HTe⁻ kwisixazululo se-zinc, sabela ku-80°C amahora angu-6.
3. I-Centrifugation: Ngemuva kokusabela, i-centrifuge ku-10,000rpm imizuzu eyi-10 ukuqoqa umkhiqizo.
4. Ukugeza: Okunye ukuwasha nge-ethanol namanzi enziwe deionized kathathu.
5. Ukomisa: Vacuum yome ku-60°C amahora angu-6.

4.2.4 I-ZnTe Nanowire Synthesis

1. Ukwengezwa kwesifanekiso: Engeza i-0.2g CTAB kusixazululo se-zinc.
2. I-Hydrothermal Reaction: Dlulisa isixazululo esixubile ku-50ml Teflon-lined autoclave, sabela ku-180°C amahora angu-12.
3. Ukucubungula Kwangemuva: Kuyafana nama-nanoparticles.

4.3 Ukuthuthukiswa Kwepharamitha Yenqubo

1. Ukulawula izinga lokushisa: 80-90°C kuma-nanoparticles, 180-200°C kuma-nanowires.
2. I-pH Inani: Gcina phakathi kuka-9-11.
3. Isikhathi Sokuphendula: Amahora angu-4-6 ama-nanoparticles, amahora angu-12-24 ama-nanowires.

4.4 Ukuhlaziya Okuhle Nokubi

Izinzuzo:

• Ukusabela kwezinga lokushisa eliphansi, ukonga amandla
• I-morphology elawulekayo nosayizi
• Ifanele ukukhiqizwa kwenani elikhulu

Ububi:

• Imikhiqizo ingaqukatha ukungcola
• Idinga ukucutshungulwa kwangemuva
• Ikhwalithi yekristalu ephansi

5. I-Molecular Beam Epitaxy (MBE) ye-ZnTe Thin Film Ukulungiselela

5.1 Isimiso

I-MBE ikhulisa amafilimu amancane e-ZnTe-crystal single-crystal ngokuqondisa imishayo yamangqamuzana ye-Zn ne-Te endaweni engaphansi ngaphansi kwezimo ze-vacuum ephezulu kakhulu, elawula ngokunembile izilinganiso ze-beam flux kanye nezinga lokushisa le-substrate.

5.2 Inqubo enemininingwane

5.2.1 Ukulungiselela Uhlelo

1. Isistimu ye-Vacuum: I-vacuum eyisisekelo ≤1×10⁻⁸Pa.
2. Ukulungiselela Umthombo:
   • Umthombo weZinc: 6N high-purity zinc ku-BN crucible.
   • Umthombo we-Tellurium: 6N high-purity tellurium ku-PBN crucible.
3. Ukulungiswa kwe-Substrate:
   • I-GaAs (100) esetshenziswa ngokuvamile.
   • Ukuhlanzwa kwe-substrate: Ukuhlanza i-solvent ye-organic → ukufakwa kwe-asidi → ukuhlanzwa kwamanzi okwenziwe nge-deionized → ukomiswa kwe-nitrogen.

5.2.2 Inqubo Yokukhula

1. I-Substrate Outgassing: Bhaka ku-200 ° C ihora elingu-1 ukuze ususe ama-adsorbates angaphezulu.
2. Ukususwa kwe-Oxide: Shisisa ufike ku-580°C, ubambe imizuzu eyi-10 ukuze ususe ama-oxide angaphezulu.
3. Ukukhula Kwesendlalelo se-Buffer: Kuphole ku-300°C, khulisa ungqimba lwebhafa we-ZnTe ongu-10nm.
4. Ukukhula Okuyinhloko:
   • Ukushisa kwe-substrate: 280-320°C.
   • Ingcindezi elinganayo ye-zinc beam: 1×10⁻⁶Tor.
   • Ingcindezi elinganayo ye-Tellurium beam: 2×10⁻⁶Torr.
   • Isilinganiso se-V/III silawulwa ku-1.5-2.0.
   • Izinga lokukhula: 0.5-1μm/h.
5. I-Annealing: Ngemva kokukhula, i-anneal ku-250°C imizuzu engu-30.

5.2.3 Ukuqapha In-Situ

1. I-RHEED Monitoring: Ukubhekwa kwesikhathi sangempela kokwakhiwa kabusha kwendawo kanye nemodi yokukhula.
2. I-Mass Spectrometry: Qapha ukuqina kwe-molecular beam.
3. I-Infrared Thermometry: Ukulawula izinga lokushisa kwe-substrate okunembile.

5.3 Amaphuzu Okulawula Inqubo

1. Ukulawulwa Kwezinga Lokushisa: Izinga lokushisa elingaphansi komhlaba lithinta ikhwalithi yekristalu nokuma kwendawo.
2. I-Beam Flux Ratio: Isilinganiso se-Te/Zn sithonya izinhlobo zokukhubazeka nokugxila.
3. Izinga Lokukhula: Amanani aphansi athuthukisa ikhwalithi yekristalu.

5.4 Ukuhlaziya Okuhle Nokubi

Izinzuzo:

• Ukwakheka okunembile nokulawula i-doping.
• Amafilimu e-single-crystal ekhwalithi ephezulu.
• Izindawo eziyisicaba ze-athomu ziyafezeka.

Ububi:

• Imishini ebizayo.
• Amazinga okukhula kancane.
• Idinga amakhono athuthukile okusebenza.

6. Ezinye Izindlela Zokuhlanganisa

6.1 I-Chemical Vapor Deposition (CVD)

1. Ama-Precursors: I-Diethylzinc (DEZn) ne-disopropyltelluride (DIPTe).
2. Izinga Lokushisa Lokusabela: 400-500°C.
3. I-Carrier Gas: I-nitrogen ephezulu noma i-hydrogen.
4. Ingcindezi: Ingcindezi yasemkhathini noma ephansi (10-100Torr).

6.2 Ukuhwamuka kokushisa

1. I-Source Material: I-powder ye-ZnTe ehlanzekile.
2. Izinga leVacuum: ≤1×10⁻⁴Pa.
3. Izinga Lokushisa Lokuhwamuka: 1000-1100°C.
4. I-Substrate Temperature: 200-300°C.

7. Isiphetho

Kunezindlela ezihlukahlukene zokuhlanganisa i-zinc telluride, ngayinye inezinzuzo zayo kanye nokubi. Ukusabela kwe-Solid-state kulungele ukulungiswa kwempahla ngobuningi, ukuthuthwa komhwamuko kukhiqiza amakristalu angawodwa ekhwalithi ephezulu, izindlela zesixazululo zilungele ama-nanomaterials, futhi i-MBE isetshenziselwa amafilimu amancane amancane ekhwalithi ephezulu. Izicelo ezisebenzayo kufanele zikhethe indlela efanelekile ngokusekelwe ezidingweni, ngokulawula okuqinile kwemingcele yenqubo ukuze kutholwe izinto ezisebenza kahle ze-ZnTe. Izikhombisi-ndlela zesikhathi esizayo zifaka ukuhlanganiswa kwezinga lokushisa eliphansi, ukulawulwa kwe-morphology, kanye nokwenza ngcono inqubo ye-doping.