Izinyathelo zenqubo ye-Cadmium namapharamitha

Izindaba

Izinyathelo zenqubo ye-Cadmium namapharamitha


I. I-Raw Material Pretreatment kanye Nokuhlanzwa Okuyisisekelo

  1. .Ukulungiswa kwe-High-Purity Cadmium Feedstock.
  • .Ukugeza nge-AcidGxilisa ingots ye-cadmium yezinga lezimboni ku-5% -10% isixazululo se-nitric acid ku-40-60°C amahora angu-1-2 ukuze ususe ama-oxide angaphezulu nokungcola kwensimbi. Hlanza ngamanzi e-deionized kuze kube yilapho i-pH engathathi hlangothi futhi i-vacuum yomile.
  • .I-Hydrometallurgical Leaching: Phatha imfucuza equkethe i-cadmium (isb., i-copper-cadmium slag) nge-sulfuric acid (i-concentration engu-15-20%) ku-80-90°C amahora angu-4-6, uzuze ≥95% ukusebenza kahle kwe-cadmium leaching. Hlunga bese wengeza i-zinc powder (1.2-1.5 izikhathi stoichiometric ratio) ukuze ugudluke ukuze uthole isipontshi cadmium
  1. .Ukuncibilika kanye Ukusakaza.
  • Layisha isipontshi se-cadmium ezitsheni ze-graphite ezihlanzekile kakhulu, zincibilike ngaphansi kwe-argon atmosphere ku-320-350°C, bese uthele ezibunjeni ze-graphite ukuze uphole kancane. Yenza ama-ingots anokuminyana ≥8.65 g/cm³

II. Zone Refining

  1. .Izisetshenziswa kanye namapharamitha.
  • Sebenzisa iziko elincibilikisa indawo elintantayo elivundlile ezinobubanzi bezoni encibilikisiwe obungu-5-8 mm, isivinini sokunqamula esingu-3-5 mm/h, kanye namaphasi wokucwenga angu-8-12. I-gradient yokushisa: 50-80 ° C / cm; vacuum ≤10⁻³ Pa
  • .Ukwehlukaniswa Kokungcola: Indawo ephindaphindiwe idlula i-concentrate lead, i-zinc, nokunye ukungcola emsileni we-ingot. Susa ingxenye yokugcina engu-15-20% enothile ngokungcola, uzuze ubumsulwa obuphakathi ≥99.999%
  1. .Izilawuli Ezibalulekile.
  • Izinga lokushisa lendawo encibilikisiwe: 400-450°C (ngaphezulu kancane kwephoyinti lokuncibilika le-cadmium elingu-321°C);
  • Izinga lokupholisa: 0.5-1.5°C/min ukuze kuncishiswe ukukhubazeka kwe-lattice;
  • Izinga lokugeleza kwe-Argon: 10-15 L/min ukuvimbela i-oxidation

III. I-Electrolytic Refining

  1. .Ukwakhiwa kwe-Electrolyte.
  • Ukwakheka kwe-Electrolyte: I-Cadmium sulfate (CdSO₄, 80-120 g/L) ne-sulfuric acid (pH 2-3), ene-gelatin engu-0.01-0.05 g/L ukuze kuthuthukiswe idiphozithi ye-cathode
  1. .Amapharamitha okucubungula.
  • I-Anode: Ipuleti le-cadmium elingahluziwe; I-Cathode: Ipuleti ye-Titanium;
  • Ukuminyana kwamanje: 80-120 A/m²; I-voltage yeselula: 2.0-2.5 V;
  • Ukushisa kwe-Electrolysis: 30-40 ° C; Ubude besikhathi: amahora angu-48-72; Ukuhlanzeka kwe-Cathode ≥99.99%.

IV. I-Vacuum Reduction Distillation

  1. .Ukwehliswa Kwezinga Lokushisa Eliphezulu Nokwehlukana.
  • Beka ama-cadmium ingots esithandweni sevacuum (ingcindezi ≤10⁻² Pa), yethula i-hydrogen njengesinciphisi, bese ushisa ku-800-1000°C ukuze unciphise ama-cadmium oxides abe yi-gaseous cadmium. Ukushisa kwe-Condenser: 200-250 ° C; Ukuhlanzeka kokugcina ≥99.9995%
  1. .Ukususwa Ukungcola Ngempumelelo.
  • Umthofu osele, ithusi, nokunye ukungcola kwensimbi ≤0.1 ppm;
  • Okuqukethwe komoyampilo ≤5 ppm

V. Czochralski Ukukhula Kwekristalu Eyodwa

  1. .Melt Control kanye Seed Crystal Ukulungiselela.
  • Layisha ama-ingots e-cadmium ahlanzekile kakhulu ku-high-purity quartz crucibles, encibilika ngaphansi kwe-argon ku-340-360°C. Sebenzisa imbewu engu-<100>-oriented single-crystal cadmium (ububanzi obungu-5-8 mm), efakwe ngaphambili ku-800°C ukuze uqede ukucindezelwa kwangaphakathi
  1. .I-Crystal Pulling Parameters.
  • Isivinini sokudonsa: 1.0-1.5 mm/min (isigaba sokuqala), 0.3-0.5 mm/min (ukukhula kwesimo esizinzile);
  • Ukujikeleza kwe-Crucible: 5-10 rpm (counter-rotation);
  • I-gradient yokushisa: 2-5°C/mm; Ukushintshashintsha kwezinga lokushisa lokusebenzelana okuqinile noketshezi ≤±0.5°C
  1. .I-Defect Suppression Techniques.
  • .Usizo Lwensimu Yamagnetic: Faka i-0.2-0.5 T ye-axial magnetic field ukuze ucindezele ukuncibilika kokuncibilika nokunciphisa izilinganiso zokungcola;
  • .Ukupholisa okulawulwayo: Izinga lokupholisa langemva kokukhula lika-10-20°C/h linciphisa ukukhubazeka kokugudluzwa okubangelwa ingcindezi yokushisa.

VI. Ngemuva kokucubungula kanye nokulawula ikhwalithi

  1. .I-Crystal Machining.
  • .Ukusika: Sebenzisa amasaha ocingo lwedayimane ukuze uhlukanise abe amawafa angu-0.5-1.0 mm ngesivinini socingo esingu-20-30 m/s;
  • .Ukupholisha: I-Chemical mechanical polishing (CMP) enengxube ye-nitric acid-ethanol (isilinganiso esingu-1:5 vol.), ukuzuza ubulukhuni obuphezulu obungu-Ra ≤0.5 nm.
  1. .Amazinga Ekhwalithi.
  • .Ubumsulwa: I-GDMS (Glow Discharge Mass Spectrometry) iqinisekisa i-Fe, Cu, Pb ≤0.1 ppm;
  • .Ukungazweli: ≤5×10⁻⁸ Ω·m (ubumsulwa ≥99.9999%);
  • .I-Crystallographic Orientation: Ukuchezuka <0.5°; Ukuminyana kokususwa ≤10³/cm²

VII. Izikhombisi-ndlela Zokuthuthukisa

  1. .Ukususwa Ukungcola Okuhlosiwe.
  • Sebenzisa ama-ion-exchange resins ekukhangisweni okukhethiwe kwe-Cu, Fe, njll., kuhlanganiswe nokucwengwa kwendawo enezigaba eziningi ukuze uzuze ubumsulwa bebanga elingu-6N (99.9999%)
  1. .Ukuthuthukiswa Okuzenzakalelayo.
  • Ama-algorithms e-AI aguqula ngamandla isivinini sokudonsa, ama-gradients okushisa, njll., ukwandisa isivuno sisuka ku-85% siye ku-93%;
  • Khulisa usayizi we-crucible uye kuma-intshi angu-36, okwenza i-feedstock yeqoqo elilodwa ibe ngu-2800 kg, yehlise ukusetshenziswa kwamandla ku-80 kWh/kg
  1. .Ukusimama kanye Nokutholwa Kwezinsiza.
  • Khiqiza kabusha imfucuza yokugeza i-asidi ngokushintshaniswa kwe-ion (i-Cd recovery ≥99.5%);
  • Phatha amagesi aphumayo nge-actiated carbon adsorption + alkaline scrubbing (ukubuyiswa komhwamuko we-Cd ≥98%)

Isifinyezo

Inqubo yokukhula kwekristalu ye-cadmium kanye nenqubo yokuhlanza ihlanganisa i-hydrometallurgy, ukucwengwa komzimba okunezinga lokushisa eliphezulu, kanye nobuchwepheshe bokukhula kwekristalu ngokunemba. Ngokucwiliswa kwe-asidi, ukucwengisiswa kwendawo, i-electrolysis, i-vacuum distillation, kanye nokukhula kwe-Czochralski—okuhambisana nokuzenzakalela kanye nemikhuba eco-friendly— kwenza ukukhiqizwa okuzinzile kwekristalu eyodwa ye-cadmium ye-6N-grade ultra-high-purity single. Lokhu kuhlangabezana nezidingo zezitholi ze-nuclear, izinto ze-photovoltaic, namadivayisi athuthukisiwe we-semiconductor. Intuthuko yesikhathi esizayo izogxila ekukhuleni kwekristalu ngezinga elikhulu, ukuhlukaniswa kokungcola okuhlosiwe, kanye nokukhiqizwa kwekhabhoni ephansi.


Isikhathi sokuthumela: Apr-06-2025