Ukukhula Nokuhlanzwa Kwekristalu Ye-Tellurium Ye-7N
I. Ukwelashwa Kwangaphambi Kwezinto Ezingavuthiwe kanye Nokuhlanzwa Kwangaphambi Kwezinto
- Ukukhethwa Nokuchotshozwa Kwezinto Ezingavuthiwe
- Izidingo Zezinto EzibalulekileSebenzisa i-tellurium ore noma i-anode slime (okuqukethwe kwe-Te ≥5%), okungcono i-copper slime ye-anode slime (equkethe i-Cu₂Te, i-Cu₂Se) njengezinto zokusetshenziswa.
- Inqubo Yokwelashwa Ngaphambi Kokwelashwa:
- Ukuchoboza okuqinile kube usayizi wezinhlayiya ≤5mm, kulandelwe ukugaya ibhola kube yi-≤200 mesh;
- Ukuhlukaniswa kwamagnetic (ubukhulu bensimu yamagnetic ≥0.8T) ukususa i-Fe, i-Ni, kanye nokunye ukungcola kwamagnetic;
- Ukuntanta kwegwebu (pH=8-9, abaqoqi be-xanthate) ukuze kuhlukaniswe i-SiO₂, i-CuO, kanye nokunye ukungcola okungewona amandla kazibuthe.
- Izinyathelo zokuzivikelaGwema ukufaka umswakama ngesikhathi sokwelashwa okumanzi ngaphambi kokuthosa (kudinga ukomiswa ngaphambi kokuthosa); lawula umswakama osendaweni ≤30%.
- Ukuthosa kanye nokuxutshwa kwe-pyrometallurgical
- Amapharamitha Enqubo:
- Izinga lokushisa lokusajisa nge-oxidation: 350–600°C (ukulawula okuhleliwe: izinga lokushisa eliphansi lokususa i-sulfurization, izinga lokushisa eliphezulu lokususa i-oxidation);
- Isikhathi sokuthosa: amahora angu-6-8, ngesilinganiso sokugeleza kwe-O₂ esingu-5-10 L/min;
- I-Reagent: I-asidi ye-sulfuric egxilile (98% H₂SO₄), isilinganiso sobuningi Te₂SO₄ = 1:1.5.
- Ukusabela Kwamakhemikhali:
Cu2Te+2O2+2H2SO4→2CuSO4+TeO2+2H2OCu2Te+2O2+2H2 SO4→2CuSO4+TeO2+2H2O - Izinyathelo zokuzivikela: Lawula izinga lokushisa ≤600°C ukuvimbela ukuguquguquka kwe-TeO₂ (izinga lokubila elingu-387°C); phatha igesi yokukhipha umoya nge-NaOH scrubbers.
II. Ukuhlanza ngogesi kanye nokuhluzwa nge-vacuum
- Ukuhlanza ngogesi
- Uhlelo lwe-Electrolyte:
- Ukwakheka kwe-Electrolyte: H₂SO₄ (80–120g/L), TeO₂ (40–60g/L), okungeziwe (i-gelatin 0.1–0.3g/L);
- Ukulawulwa kwezinga lokushisa: 30–40°C, izinga lokugeleza kwegazi lingu-1.5–2 m³/h.
- Amapharamitha Enqubo:
- Ubuningi bamanje: 100–150 A/m², i-voltage yeseli 0.2–0.4V;
- Isikhala se-electrode: 80–120mm, ubukhulu be-cathode deposition 2–3mm/8h;
- Ukusebenza kahle kokususa ukungcola: Cu ≤5ppm, Pb ≤1ppm.
- Izinyathelo zokuzivikela: Hlunga njalo i-electrolyte (ukunemba ≤1μm); cwebezela ngomshini izindawo ze-anode ukuze uvimbele ukunyakaza.
- Ukuhluzwa kwe-Vacuum
- Amapharamitha Enqubo:
- Izinga le-vacuum: ≤1×10⁻²Pa, izinga lokushisa lokuhluza 600–650°C;
- Izinga lokushisa lendawo ye-Condenser: 200–250°C, Ukusebenza kahle kokufinyela komoya we-Te ≥95%;
- Isikhathi sokuhluza: amahora angu-8–12, umthamo we-single-batch ≤50kg.
- Ukusatshalaliswa Kokungcola: Ukungcola okubilayo kancane (Se, S) kuqongelela ngaphambili kwe-condenser; ukungcola okubilayo kakhulu (Pb, Ag) kuhlala ku-residues.
- Izinyathelo zokuzivikela: Uhlelo lwe-vacuum olungaphambi kokupompa lube yi-≤5×10⁻³Pa ngaphambi kokushisa ukuvimbela i-Te oxidation.
III. Ukukhula Kwekristalu (Ukucwebezela Okuqondisiwe)
- Ukucushwa Kwemishini
- Amamodeli E-Crystal Growth Furnace: TDR-70A/B (umthamo ongu-30kg) noma i-TRDL-800 (umthamo ongu-60kg);
- Izinto ezisetshenziswa ekushiseni: I-graphite emsulwa kakhulu (okuqukethwe komlotha ≤5ppm), ubukhulu Φ300×400mm;
- Indlela Yokushisa: Ukumelana ne-Graphite Ukushisa, izinga lokushisa eliphezulu lingu-1200°C.
- Amapharamitha Enqubo
- Ukulawula Ukuncibilika:
- Izinga lokushisa lokuncibilika: 500–520°C, ukujula kwechibi lokuncibilika 80–120mm;
- Igesi evikelayo: Ar (ubumsulwa ≥99.999%), izinga lokugeleza lingu-10–15 L/min.
- Amapharamitha Okwenza Ikristalu:
- Izinga lokudonsa: 1–3mm/h, isivinini sokujikeleza kwekristalu esingu-8–12rpm;
- I-gradient yokushisa: I-Axial 30–50°C/cm, i-radial ≤10°C/cm;
- Indlela yokupholisa: Isisekelo sethusi esipholile ngamanzi (izinga lokushisa lamanzi lingu-20–25°C), ukupholisa okuphezulu kwemisebe.
- Ukulawula Ukungcola
- Umphumela Wokuhlukaniswa: Ukungcola okufana ne-Fe, i-Ni (i-segregation coefficient <0.1) kuqongelela emingceleni yokusanhlamvu;
- Imijikelezo Yokuncibilikisa: imijikelezo engu-3–5, ukungcola okuphelele kokugcina ≤0.1ppm.
- Izinyathelo zokuzivikela:
- Mboza ubuso obuncibilikisiwe ngamapuleti e-graphite ukuze ucindezele ukuguquguquka kwe-Te (izinga lokulahlekelwa ≤0.5%);
- Gada ububanzi bekristalu ngesikhathi sangempela usebenzisa ama-laser gauges (ukunemba ± 0.1mm);
- Gwema ukushintshashintsha kwezinga lokushisa >±2°C ukuze uvimbele ukwanda kobuningi bokuhlukana (okuhlosiwe ≤10³/cm²).
IV. Ukuhlolwa Kwekhwalithi kanye Nezilinganiso Eziyinhloko
| Into Yokuhlola | Inani Elijwayelekile | Indlela Yokuhlola | Umthombo |
| Ubumsulwa | ≥99.99999% (7N) | I-ICP-MS | |
| Ukungcola Okuphelele Kwensimbi | ≤0.1ppm | I-GD-MS (i-Glow Discharge Mass Spectrometry) | |
| Okuqukethwe kwe-oksijini | ≤5ppm | Ukumuncwa kwegesi engasebenzi kahle i-Fusion-IR | |
| Ubuqotho Bekristalu | Ubuningi bokuhlukaniswa ≤10³/cm² | I-Topography ye-X-ray | |
| Ukumelana (300K) | 0.1–0.3Ω·cm | Indlela Yokuhlola Emine |
V. Izinqubo Zokuvikela Ezemvelo Nezokuphepha
- Ukwelashwa Ngegesi Yokukhipha Umoya:
- Ukukhipha ugesi: Nciphisa i-SO₂ ne-SeO₂ ngama-scrubbers e-NaOH (pH≥10);
- Umoya wokucwilisa nge-vacuum: Condense bese ubuyisa umhwamuko we-Te; amagesi asele afakwe nge-activated carbon.
- Ukuvuselelwa Kwe-Slag:
- I-Anode slime (equkethe i-Ag, i-Au): Buyisela nge-hydrometallurgy (uhlelo lwe-H₂SO₄-HCl);
- Izinsalela ze-Electrolysis (eziqukethe i-Pb, i-Cu): Buyela ezinhlelweni zokuncibilikisa ithusi.
- Izindlela Zokuphepha:
- Abasebenzi kumele bagqoke imaski yegesi (Umswakama unobuthi); balondoloze umoya ongenayo ingcindezi (izinga lokushintshana komoya ≥10 imijikelezo/ihora).
Iziqondiso Zokuthuthukisa Inqubo
- Ukuzivumelanisa Nezinto EzingavuthiweLungisa izinga lokushisa lokuthosa kanye nesilinganiso se-asidi ngokuguquguqukayo ngokusekelwe emithonjeni ye-anode slime (isb., ukuncibilikisa ithusi vs. i-lead);
- Ukulinganisa Izinga Lokudonsa NgekristaluLungisa isivinini sokudonsa ngokwe-melt convection (inombolo kaReynolds Re≥2000) ukuze ucindezele i-supercooling yomthethosisekelo;
- Ukusebenza Kahle KwamandlaSebenzisa ukushisa kwezindawo zokushisa ezimbili (indawo eyinhloko engu-500°C, indawo engaphansi engu-400°C) ukunciphisa ukusetshenziswa kwamandla okumelana ne-graphite ngo-30%.
Isikhathi sokuthunyelwe: Mashi-24-2025
